Effects of annealing atmosphere and substrate on the photoluminescence and Raman scattering from Si nanocrystals in a SiO2 matrix

被引：4
作者：
Bineva, I
Nesheva, D
Aneva, Z
Levi, Z
Raptis, C
Hofmeister, H
Stavrev, S
机构：
[1] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria
[2] Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece
[3] Max Planck Inst Microstruct Phys, D-06120 Halle Saale, Germany
[4] Bulgarian Acad Sci, Cent Lab Space Sci, BU-1784 Sofia, Bulgaria
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期
关键词：
D O I：
10.1023/A:1026113506580
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin films of SiOx have been prepared on quartz or c-Si substrates by thermal evaporation of SiO in vacuum and post-annealed at 1373 Kin an argon or hydrogen atmosphere. High-resolution electron microscopy has shown the existence of silicon nanocrystals in the annealed films, and this result has been confirmed by Raman scattering. Photoluminescence has been observed from annealed films and attributed to radiative recombination in Si nanocrystals. Its intensity is appreciably higher upon annealing in Ar than in H-2. It is shown that substrates strongly affect the Raman scattering from Si nanocrystals in nc-Si-SiO2 thin films with low filling factors. (C) 2003 Kluwer Academic Publishers.
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收藏
页码：799 / 800
页数：2
相关论文
共 7 条
[1]   Oxide and hydrogen capped ultrasmall blue luminescent Si nanoparticles [J].
Belomoin, G ;
Therrien, J ;
Nayfeh, M .
APPLIED PHYSICS LETTERS, 2000, 77 (06) :779-781
[2]   CRYSTALLITE SIZE DETERMINATION IN MU-C-GE FILMS BY X-RAY-DIFFRACTION AND RAMAN LINE-PROFILE ANALYSIS [J].
DOSSANTOS, DR ;
TORRIANI, IL .
SOLID STATE COMMUNICATIONS, 1993, 85 (04) :307-310
[3]   Correlation between luminescence and structural properties of Si nanocrystals [J].
Iacona, F ;
Franzò, G ;
Spinella, C .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :1295-1303
[4]   Silicon nanocrystallites in buried SiOx layers via direct wafer bonding [J].
Kahler, U ;
Hofmeister, H .
APPLIED PHYSICS LETTERS, 1999, 75 (05) :641-643
[5]   Composition, structure and annealing-induced phase separation in SiOX films produced by thermal evaporation of SiO in vacuum [J].
Nesheva, D ;
Bineva, I ;
Levi, Z ;
Aneva, Z ;
Merdzhanova, T ;
Pivin, JC .
VACUUM, 2002, 68 (01) :1-9
[6]   Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films [J].
Nesheva, D ;
Raptis, C ;
Perakis, A ;
Bineva, I ;
Aneva, Z ;
Levi, Z ;
Alexandrova, S ;
Hofmeister, H .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) :4678-4683
[7]   The preparation of photoluminescent Si nanocrystal-SiOx films by reactive evaporation [J].
Zhang, S ;
Zhang, W ;
Yuan, J .
THIN SOLID FILMS, 1998, 326 (1-2) :92-98
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