Quantitative analysis of the defects in CVD grown graphene by plasmon-enhanced Raman scattering

被引:18
作者
Liu, Yansheng [1 ,2 ]
Feng, Huayu [3 ,4 ]
Luo, Feng [1 ]
机构
[1] IMDEA Nanosci, Faraday 9,Ciudad Univ Cantoblanco, Madrid 28049, Spain
[2] Univ Autonoma Madrid, Sch Sci, Ciudad Univ Cantoblanco, E-28049 Madrid, Spain
[3] Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China
[4] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
MONOLAYER GRAPHENE; HIGH-QUALITY; SPECTROSCOPY; GOLD; HYBRID; ARRAYS; CARBON; FILMS; GRAPHITE; SURFACES;
D O I
10.1016/j.carbon.2020.01.063
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this paper, a study of quantitative analysis of the defects in chemical vapor deposition (CVD) grown graphene through plasmon-enhanced Raman scattering has been performed. By designing and fabricating three-dimensional hybrid Au nano-particles/single-layer-graphene/Au nano-holes (Au NPs/SLG/ Au NHs) structures, the defects induced Raman scattering signals of SLG have been extremely enhanced. The light-graphene interaction between graphene and plasmonic nanostructures heightened the crosssection of the Raman scattering resulting in enhancing Raman signals. In the SERS spectra of graphene, the D band and D' band which associated with defects-induced double resonance (DR) Raman scattering processes have been clearly observed. A general and empirical formula has been applied to quantify graphene defects nano-crystallite (La) through the relation between the ratio of I-D/I-G and E-L(4). Additionally, an empirical formula for quantifying the defects based on the relation between I-D/I-G and E-L(4) was proposed. Besides, the Au NPs/SLG/Au NHs as a SERS substrate has been applied in detecting the fluorescein molecular under low concentration, and it exhibited good SERS performance. (C) 2020 Elsevier Ltd. All rights reserved.
引用
收藏
页码:153 / 161
页数:9
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