Graphene doped (Bi2Te3-Bi2O3-TeO2): PVP dielectrics in metal-semiconductor structures

To determine the influence of the thin polymer interface film on the electrical and dielectric characteristics of the Al/p-Si MS structure, the Graphene doped (Bi2Te3-Bi2O3-TeO2): PVP film was deposited on the silicon substrate using the spin-coating method. The mean size of these nanostructures was found less than 50 nm using the XRD method. EDX profile shows that the structure of Bi2Te3-Bi2O3-TeO2 consists of the bismuth (Bi), tellurium (Te), and oxygen (O) atoms and also not consists of other impurities or compounds. The key electrical and dielectric parameters of metal-semiconductor (MS) and metal-polymer/semiconductor nanocomposite structures were examined using I-V and Z-f analyses. The values of saturation-current (I-0), barrier-height (BH) at zero-bias (phi(B0)), ideality factor (n), series and shunt resistances (R-s, R-sh) data for both structures were derived from the I-V experiments at +/- 6 V voltage scales and compared with them. The energy distributions of interface state density (D-it) were also acquired from the voltage-dependent phi(B)(V) and n(V) data. Finally, the frequency dependence of complex dielectric (epsilon* = epsilon ' - j epsilon '') and electric modulus (M* = M ' + jM ''), dielectric loss tangent (tan delta), and ac electrical conductivity (sigma(ac)) values were evaluated from the C-f and G/omega-f experiments for both structures at 10(2)-10(6) Hz frequency scale. The results depict that the Bi2Te3-Gr: PVP organic layer improves the quality of the MS structure as it reduces the leakage current, n, and D-it and increases the R-sh, BH, and epsilon '.