Improved Performance of InGaZnO Thin-Film Transistor With Ti Incorporation Into La2O3 Gate Dielectric

被引：2
作者：
Song, J. Q. [1 ]
Yu, Y. Q. [1 ]
Zheng, K. L. [1 ]
Su, Y. T. [1 ]
机构：
[1] Shenzhen Technol Univ, Phys Teaching & Expt Ctr, Shenzhen 518118, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷
关键词：
Amorphous InGaZnO (a-IGZO); thin-film transistor (TFT); high-k dielectric; Ti incorporation; OXIDE;
D O I：
10.1109/JEDS.2021.3111866
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of Ti incorporation in La2O3 gate dielectric on the electrical characteristics of amorphous InGaZnO thin-film transistor are studied. Compared to the control sample with La2O3 gate dielectric, the device performance can be significantly improved with an appropriate Ti dose. Accordingly, the sample with a Ti/(Ti+La) ratio of 6.7% presents a high saturation mobility of 28.1 cm(2)V(-1)s(-1), small subthreshold slope of 0.17 V/dec, large on/off current ratio of 7.2x10(7), and acceptable hysteresis. We attribute such an improvement to the passivation of the defect states at/near the La2O3/InGaZnO interface as well as the enhancement of moisture resistance of La2O3 film due to Ti incorporation. However, excessive Ti incorporation leads to device degradation, which is due to more oxygen vacancies generated in gate dielectric.
引用
收藏
页码：814 / 819
页数：6
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  • [1] Hydrogenation of Mg-Doped InGaZnO Thin-Film Transistors for Enhanced Electrical Performance and Stability
    Abliz, Ablat
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (07) : 3379 - 3383
  • [2] Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers
    Abliz, Ablat
    Wan, Da
    Chen, Jui-Yuan
    Xu, Lei
    He, Jiawei
    Yang, Yanbing
    Duan, Haiming
    Liu, Chuansheng
    Jiang, Changzhong
    Chen, Huipeng
    Guo, Tailiang
    Liao, Lei
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (07) : 2844 - 2849
  • [3] Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer
    Abliz, Ablat
    Wang, Jingli
    Xu, Lei
    Wan, Da
    Liao, Lei
    Ye, Cong
    Liu, Chuansheng
    Jiang, Changzhong
    Chen, Huipeng
    Guo, Tailiang
    [J]. APPLIED PHYSICS LETTERS, 2016, 108 (21)
  • [4] A review on the recent developments of solution processes for oxide thin film transistors
    Ahn, Byung Du
    Jeon, Hye-Ji
    Sheng, Jiazhen
    Park, Jozeph
    Park, Jin-Seong
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (06)
  • [5] Formation of oxygen vacancies and Ti3+ state in TiO2 thin film and enhanced optical properties by air plasma treatment
    Bharti, Bandna
    Kumar, Santosh
    Lee, Heung-No
    Kumar, Rajesh
    [J]. SCIENTIFIC REPORTS, 2016, 6
  • [6] Effects of Thermal Annealing on La2O3 Gate Dielectric of InGaZnO Thin-Film Transistor
    Huang, X. D.
    Song, J. Q.
    Lai, P. T.
    [J]. ECS SOLID STATE LETTERS, 2015, 4 (09) : Q44 - Q46
  • [7] Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods
    Kalb, Wolfgang L.
    Batlogg, Bertram
    [J]. PHYSICAL REVIEW B, 2010, 81 (03)
  • [8] The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistors
    Kim, Doo Na
    Kim, Dong Lim
    Kim, Gun Hee
    Kim, Si Joon
    Rim, You Seung
    Jeong, Woong Hee
    Kim, Hyun Jae
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (19)
  • [9] Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating
    Kimura, M
    Inoue, S
    Shimoda, T
    Tam, SWB
    Lui, OKB
    Migliorato, P
    Nozawa, R
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) : 3855 - 3858
  • [10] Development of dielectric properties of niobium oxide, tantalum oxide, and aluminum oxide based nanolayered materials
    Kukli, K
    Ritala, M
    Leskelä, M
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (02) : F35 - F41
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