A silicon RFCMoS SOI technology for integrated cellular/WLAN RF TX modules

被引：27

作者：

Costa, J. ^{[1
]}

Carroll, M. ^{[1
]}

Jorgenson, J. ^{[1
]}

Mckay, T. ^{[1
]}

Ivanov, T. ^{[1
]}

Dinh, T. ^{[1
]}

Kozuch, D. ^{[1
]}

Remoundos, G. ^{[1
]}

Kerr, D. ^{[1
]}

Tornbak, A. ^{[1
]}

Mcmaken, J. ^{[1
]}

Zybura, M. ^{[1
]}

机构：

[1] RF Micro Dev, Greensboro, NC 27309 USA

来源：

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年

关键词：

RF CMOS; SOI; silicon power amplifiers; transmit modules; TX modules; silicon switch; signal isolation;

D O I：

10.1109/MWSYM.2007.380484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the development of it novel RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1 W-cm) silicon substrates. This technology provides a platform for cost-effective monolithic integration of several RF RF TX functions for cellular and WLAN RF system applications. The technology includes the integration of an RF power LDMOS transistor capable of nearly comparable linear and saturated RF power characteristics to GaAs solutions in the frequency range between 0.8GH-2.4GHz. We present measured results of RF power devices in the cellular and WLAN bands, as well as characterization data of integrated antenna diversity switches, and integrated power management circuits.

引用

页码：445 / 448

页数：4