An experimental and simulation study of arsenic diffusion behavior in point defect engineered silicon

被引：0

作者：

Kong, Ning ^{[1
]}

Kirichenko, Taras A. ^{[2
]}

Hwang, Gyeong S. ^{[3
]}

Mark, Foisy C. ^{[2
]}

Anderson, Steven G. H. ^{[2
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

[2] Freescale Semicond Inc, Austin, TX 78721 USA

[3] Univ Texas Austin, Dept Chem Engn, Austin, TX 78712 USA

来源：

SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II | 2007年 / 994卷

关键词：

D O I：

暂无

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

We report that arsenic diffusion can be enhanced and retarded by surrounding interstitial rich and vacancy rich environments created by Si point defect engineering implant. The enhancement and retardation can be attributed to the dominant arsenic interstitial diffusion mechanism during post-implant anneal. Kinetic Monte Carlo simulations with newly implemented models show good match with experiments. Our study suggests the importance of arsenic interstitial mechanism and a possible approach for n-type ultra shallow junction fabrication.

引用

页码：307 / +

页数：3

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