Effects of ambient pressure on silicon nanowire growth

被引：28
作者：
Fan, XH
Xu, L
Li, CP
Zheng, YF
Lee, CS
Lee, ST [1 ]
机构：
[1] City Univ Hong Kong, Dept Phys & Mat Sci, COSDAF, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
来源：
CHEMICAL PHYSICS LETTERS | 2001年 / 334卷 / 4-6期
关键词：
D O I：
10.1016/S0009-2614(00)01366-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Growth of silicon nanowires (SiNWs) by thermal evaporation of SiO in a closed system was studied. The yield of SiNWs obtained in the present closed system was much higher than that from the previous open systems. As the ambient pressure increased, the yield of SiNWs decreased and the diameter of the SiNWs increased, but the surface of the SiNWs was roughened. Transmission electron microscopic examination showed that the originally smooth surface of SiNWs was roughened by the formation of Si nano-particles. The implication of these results on the growth mechanism of the SiNWs is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：229 / 232
页数：4
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