A proper solution to study the etch pits on LiAlO2 single crystal

被引:2
|
作者
Huang, Huichun [1 ]
Chou, Mitch M. C. [1 ]
Gan, Dershin [1 ]
Shen, Pouyan [1 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan
关键词
Defects; Substrates; Etching; Czochralski method; Oxides; CZOCHRALSKI GROWTH; GAMMA-LIALO2; PLANE; SUBSTRATE;
D O I
10.1016/j.jcrysgro.2010.09.066
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Detailed structures of the etch pits on the (1 0 0) (0 1 0) and (0 0 1) surfaces of LiAlO2 single crystals have been studied The crystal was grown by the Czochralski-pulling technique Hot water is found to be a good etching solution for LiAlO2 crystal On the (1 0 0) surface many shallow rhomboidal etch pits with a deep rhombic pit at the center are revealed and can line up to form boundaries These etch pits are categorized into two groups which are symmetric relative to the [0 1 0] direction and are separated by boundaries made up of dense etch pits On the (0 0 1) surface square pyramid-like etch pits are present However rectangle-like etch pits are found on the (0 1 0) surface which may not be related to dislocations The density and the distribution of dislocations are studied A scheme of the domain structure is proposed to explain the observed shapes and distributions of etch pits (C) 2010 Elsevier B V All rights reserved
引用
收藏
页码:42 / 46
页数:5
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