Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET

被引：13

作者：

Busatto, G. ^{[1
]}

Curro, G. ^{[2
]}

Iannuzzo, F. ^{[1
]}

Porzio, A. ^{[1
]}

Sanseverino, A. ^{[1
]}

Velardi, F. ^{[1
]}

机构：

[1] Univ Cassino, DAEIMI, I-03043 Cassino, Italy

[2] ST Microelect, I-95100 Catania, Italy

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 9-11期

关键词：

INDUCED LEAKAGE CURRENT; OXIDE DAMAGES; HEAVY-IONS; RUPTURE; IRRADIATION; MODEL;

D O I：

10.1016/j.microrel.2010.07.039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present an experimental study aimed to identify the test conditions at which latent damages are created for different ion species with different energy losses both in the oxide and in the silicon. Moreover, with the help of 3-D finite element simulation, we give an interpretation for explaining the role played by the charge generated during the ion strike in starting the creation of the latent damage and in defining its amount. (C) 2010 Elsevier Ltd. All rights reserved.

引用

收藏

页码：1842 / 1847

页数：6

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