Effect of shallow oxide traps on the low-temperature operation of SOI transistors

被引：0

作者：

Lysenko, VS ^{[1
]}

Tyagulski, IP ^{[1
]}

Osiyuk, IN ^{[1
]}

Gomeniuk, YV ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252650 Kiev, Ukraine

来源：

PERSPECTIVES, SCIENCE AND TECHNOLOGIES FOR NOVEL SILICON ON INSULATOR DEVICES | 2000年 / 73卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：307 / 313

页数：7

共 9 条

[1]

ALAWNEH I, 1998, J PHYSIQUE 4, V8

[2] CONDUCTION MECHANISMS IN THIN-FILM ACCUMULATION-MODE SOI P-CHANNEL MOSFETS [J].

COLINGE, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :718-723

[3]

COLINGE JP, 1991, SILICON INSULATOR

[4] CURRENT STOCHASTICITY OF FIELD-EMISSION OF CHARGE FROM TRAPS IN THE TRANSITION LAYER OF IMPLANTED MIS STRUCTURES [J].

GOMENIUK, YV ;

LITOVSKI, RN ;

LYSENKO, VS ;

OSIYUK, IN ;

TYAGULSKI, IP .

APPLIED SURFACE SCIENCE, 1992, 59 (02) :91-94

[5] THERMALLY STIMULATED FIELD-EMISSION OF CHARGE FROM TRAPS IN THE TRANSITION LAYER OF SI-SIO2 STRUCTURES [J].

GOMENIUK, YV ;

LITOVSKI, RN ;

LYSENKO, VS ;

OSIYUK, IN ;

TYAGULSKI, IP .

APPLIED SURFACE SCIENCE, 1992, 55 (2-3) :179-185

[6] INVESTIGATION OF TRAPS IN THE TRANSITION REGION OF SI-SIO2 STRUCTURES AT CRYOGENIC TEMPERATURES [J].

LYSENKO, VS ;

SYTENKO, TN ;

ZIMENKO, VI ;

SNITKO, OV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (02) :619-626

[7]

MUELLER HH, 1995, J MATER SCI-MATER EL, V6, P65, DOI 10.1007/BF00188186

[8] MICROSCOPIC STUDY OF TUNNELING PROCESSES VIA LOCALIZED STATES IN AMORPHOUS-SI/SIOX TUNNEL BARRIERS [J].

NAITO, M ;

BEASLEY, MR .

PHYSICAL REVIEW B, 1987, 35 (05) :2548-2551

[9] EVIDENCE OF DIFFERENT CONDUCTION MECHANISMS IN ACCUMULATION-MODE P-CHANNEL SOI MOSFETS AT ROOM AND LIQUID-HELIUM TEMPERATURES [J].

ROTONDARO, ALP ;

MAGNUSSON, UK ;

CLAEYS, C ;

FLANDRE, D ;

TERAO, A ;

COLINGE, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (04) :727-732

← 1 →