An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor

被引：7
作者：
Tsai, JH
Cheng, SY
Laih, LW
Liu, WC
Lin, HH
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 06期
关键词：
heterostructure-emitter bipolar transistor (HEBT); potential spike; neutral-emitter recombination current;
D O I：
10.1006/spmi.1996.0440
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new Al0.48In0.52As/Ga0.47In0.53As heterostructure-emitter bipolar transistor (HEBT) with a very low offset voltage of 40 mV has been fabricated by molecular beam epitaxy. From the theoretical analysis and experimental results, it is found that a 500-Angstrom thick emitter used in the studied device can effectively eliminate the potential spike at the N-AlInAs/n-GaInAs heterointerface. However, a degenerate current gain of about 25 is obtained, attributed to the increase of recombination current at the neutral-emitter regime. This is caused by the short hole diffusion length of GaInAs, which reduces the emitter injection efficiency. Due to the small surface recombination velocity, the emitter edge-thinning design is not essential to improve the device performance of our proposed AlInAs/GaInAs HEBT. (C) 1998 Academic Press Limited.
引用
收藏
页码：1297 / 1307
页数：11
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