A Comprehensive Model for Ferroelectric FET Capturing the Key Behaviors: Scalability, Variation, Stochasticity, and Accumulation

被引：83

作者：

Deng, Shan ^{[1
]}

Yin, Guodong ^{[2
]}

Chakraborty, Wriddhi ^{[3
]}

Dutta, Sourav ^{[3
]}

Datta, Suman ^{[3
]}

Li, Xueqing ^{[2
]}

Ni, Kai ^{[1
]}

机构：

[1] Rochester Inst Technol, Rochester, NY 14623 USA

[2] Tsinghua Univ, Beijing, Peoples R China

[3] Univ Notre Dame, Notre Dame, IN 46556 USA

来源：

2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY | 2020年

关键词：

D O I：

10.1109/vlsitechnology18217.2020.9265014

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, we developed a comprehensive model for ferroelectric FET (FeFET), which can capture all the essential ferroelectric behaviors. Unlike previous models, which can describe only a subset but not all the reported ferroelectric behaviors, the proposed model can: i) predict device performance with geometry scaling; ii) quantify the device-to-device variation with device scaling; iii) exhibit stochasticity during a single domain switching; and iv) capture the accumulation of domain switching probability with applied pulse trains. This comprehensive model would enable researchers to explore a wide range of FeFET applications and guide device development, optimization and benchmarking.

引用

页数：2