Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H2 gas generation

被引：14

作者：

Fujii, Katsushi ^{[1
,2
]}

Ito, Takashi ^{[3
]}

No, Masato ^{[3
]}

Iwaki, Yasuhiro ^{[3
]}

Yao, Takafumi ^{[2
,4
]}

Ohkawa, Kazuhiro ^{[1
,3
]}

机构：

[1] Japan Sci & Technol Agcy, Exploratory Res Adv Technol, Nalamura Inhomogeneous Crystal Project, Shinjuku Ku, 1-3 Kagurazaka, Tokyo 1628601, Japan

[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

[3] Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674917

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Surface morphology and chemical composition at n-type GaN surface after photoelectrochemical reactions were investigated. Whisker-like Ga oxides were observed in the lower pH solutions and hexagonal columns were observed in the higher pH solutions. The results indicate that different reactions occur in the different pH solutions. Dissolution amount was the lowest at a neutral pH solution. (c) 2007 WILEY-NCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2650 / +

页数：2

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