On the structural origins of ferroelectricity in HfO2 thin films

被引：514

作者：

Sang, Xiahan ^{[1
]}

Grimley, Everett D. ^{[1
]}

Schenk, Tony ^{[2
]}

Schroeder, Uwe ^{[2
]}

LeBeau, James M. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Tech Univ Dresden, NaMLab gGmbH, D-01187 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 16期

基金：

美国国家科学基金会;

关键词：

ELECTRON-DIFFRACTION; HAFNIA;

D O I：

10.1063/1.4919135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films. (C) 2015 AIP Publishing LLC.

引用

页数：4

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