Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

被引：20

作者：

Dasgupta, Sansaptak ^{[1
]}

Nidhi ^{[1
]}

Choi, Soojeong ^{[2
]}

Wu, Feng ^{[2
]}

Speck, James S. ^{[2
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 04期

关键词：

Compendex;

D O I：

10.1143/APEX.4.045502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-polar In(x)Al(1-x)N (0: 02 < x < 0: 65) films were grown and characterized by plasma-assisted molecular beam epitaxy (PAMBE). Indium incorporation in the films was characterized both as a function of the impinging In and Al flux and the growth temperature. In incorporation in the film was found to decrease with increasing growth temperature (T(gr)) for T(gr) > 560 degrees C. A smooth surface morphology was obtained for In(0.18)Al(0.82)N lattice-matched to GaN. Subsequently, N-polar In(0.18)Al(0.82)N was used as a charge-inducing barrier in a N-polar GaN HEMT structure and electrical characterizations including current-voltage (I-V) measurements were performed. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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