Thermal Transport in Graphene Oxide Films: Theoretical Analysis and Molecular Dynamics Simulation

被引:19
作者
Yang, Yi [1 ]
Zhong, Dan [2 ]
Liu, Yilun [3 ]
Meng, Donghui [4 ]
Wang, Lina [4 ]
Wei, Ning [1 ]
Ren, Guohua [4 ]
Yan, Rongxin [4 ]
Kang, Yang [1 ]
机构
[1] Northwest A&F Agr & Forestry Univ, Key Lab Agr Soil & Water Engn Arid & Semiarid Are, Minist Educ, Yangling 712100, Shaanxi, Peoples R China
[2] Zhuhai Da Hengqin Sci & Technol Dev Co Ltd, Hengqin New Area, Zhuhai 519000, Peoples R China
[3] Xi An Jiao Tong Univ, Sch Aerosp, State Key Lab Strength & Vibrat Mech Struct, Xian 710049, Peoples R China
[4] Beijing Inst Spacecraft Environm Engn, Beijing 100094, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
graphene-oxide films; thermal conductivity; interfacial thermal conductance; optimal overlap length; CONDUCTIVITY; REDUCTION;
D O I
10.3390/nano10020285
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
As a derivative material of graphene, graphene oxide films hold great promise in thermal management devices. Based on the theory of Fourier formula, we deduce the analytical formula of the thermal conductivity of graphene oxide films. The interlaminar thermal property of graphene oxide films is studied using molecular dynamics simulation. The effect of vacancy defect on the thermal conductance of the interface is considered. The interfacial heat transfer efficiency of graphene oxide films strengthens with the increasing ratio of the vacancy defect. Based on the theoretical model and simulation results, we put forward an optimization model of the graphene oxide film. The optimal structure has the minimum overlap length and the maximum thermal conductivity. An estimated optimal overlap length for the GO (graphene-oxide) films with degree of oxidation 10% and density of vacancy defect 2% is 0.33 mu m. Our results can provide effective guidance to the rationally designed defective microstructures on engineering thermal transport processes.
引用
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页数:13
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