Photochemical process of divalent germanium responsible for photorefractive index change in GeO2-SiO2 glasses

被引:22
作者
Sakoh, A [1 ]
Takahashi, M
Yoko, T
Nishii, J
Nishiyama, H
Miyamoto, I
机构
[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Saitama, Japan
[3] Natl Inst Adv Ind Sci & Technol, Osaka 5638577, Japan
[4] Osaka Univ, Grad Sch Engn, Dept Mfg Sci, Suita, Osaka 5650871, Japan
关键词
D O I
10.1364/OE.11.002679
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The photoluminescence spectra of the divalent Ge (Ge2+) center in GeO2-SiO2 glasses with different photosensitivities were investigated by means of excitation-emission energy mapping. The ultraviolet light induced photorefractivity has been correlated with the local structure around the Ge2+ centers. The glasses with a larger photorefractivity tended to exhibit a greater band broadening of the singlet-singlet transition on the higher excitation energy side accompanied by an increase in the Stokes shifts. This strongly suggests the existence of highly photosensitive Ge2+ centers with higher excitation energies. It is also found that the introduction of a hydroxyl group or boron species in GeO2-SiO2 glasses under appropriate conditions modifies the local environment of Ge2+ leading to an enhanced photorefractivity. (C) 2003 Optical Society of America.
引用
收藏
页码:2679 / 2688
页数:10
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