Simulation of stress-strain state in SiGe island heterostructures

被引：3
|
作者：
Goldstein, R. V. [1 ]
Gorodtsov, V. A. [1 ]
Shushpannikov, P. S. [1 ]
机构：
[1] Russian Acad Sci, Ishlinsky Inst Problems Mech, Moscow 119526, Russia
来源：
MECHANICS OF SOLIDS | 2010年 / 45卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
island heterostructures; quantum dots; multipole expansion method; QUANTUM DOTS; SPECTROSCOPY; FILMS; RINGS;
D O I：
10.3103/S0025654410030027
中图分类号：
O3 [力学];
学科分类号：
08 ; 0801 ;
摘要：
The problem of simulation of the stress-strain state in SiGe island heterostructures is considered. The analytic-numerical method of multipole expansions is used to obtain an approximate solution. The problem of the stressed state influence on the diffusion mobility of atoms adsorbed on the heterostructure free surface is also discussed.
引用
收藏
页码：312 / 323
页数：12
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