Experimental and theoretical studies of CuInS2 thin films for photovoltaic applications

被引:12
|
作者
Kotbi, Ahmed [1 ,2 ]
Hartiti, Bouchaib [1 ,3 ]
Fadili, Salah [1 ]
Ridah, Abderraouf [2 ]
Thevenin, Philippe [4 ]
机构
[1] Hassan II Casablanca Univ, GMEEMDD Grp, ERDyS Lab, FSTM, BP 146, Mohammadia, Morocco
[2] Hassan II Casablanca Univ, Dept Phys, FSB, LIMAT Lab, BP 7955, Mohammadia, Morocco
[3] Abdus Salam Int Ctr Theoret Phys ICTP, 11 Str Costiera, I-34151 Trieste, Italy
[4] Univ Lorraine, Dept Phys, LMOPS Lab, BP 57000, Metz, France
关键词
AB-INITIO CALCULATIONS; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; OPTOELECTRONIC PROPERTIES; LATTICE-DYNAMICS; REFRACTIVE-INDEX; 1ST PRINCIPLES; BAND-STRUCTURE; SOLAR-CELLS; CHALCOPYRITE;
D O I
10.1007/s10854-019-02479-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
CuInS2 thin films were synthesized by spray pyrolysis. The films were characterized using X-ray diffraction, Raman spectroscopy, and spectrophotometer (UV-Vis). The structural studies reveal that CuInS2 thin films are of chalcopyrite phase. The complex dielectric constants (epsilon(r) and epsilon(i)), the refractive index (n), extinction coefficient (k), absorption coefficient (alpha), gap energy (E-g), and the optical conductivity (sigma) were calculated. The obtained results are suitable for photovoltaic applications. To confirm our experimental results, a series of Ab initio calculations was performed. The generalized gradient approximation and the mBJ potential for the exchange-correlation potential have been used to calculate the band structure, density of states, charge density, and optical properties of CuInS2.
引用
收藏
页码:21096 / 21105
页数:10
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