Charge storage characteristics of iridium silicide nanocrystals embedded in SiO2 matrix for nonvolatile memory application

被引：1

作者：

Wang, Terry Tai-Jui ^{[2
]}

Hung, Shih Wei ^{[3
]}

Chuang, Pi Kai ^{[2
]}

Kuo, Cheng Tzu ^{[1
]}

机构：

[1] MingDao Univ, Dept Mat Sci & Engn, Peetow 52345, Changhua, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan

[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 24期

关键词：

Onvolatile memory; Nanocrystal; Ir-silicide; HIGH-WORK-FUNCTION; P-MOSFETS; GATE;

D O I：

10.1016/j.tsf.2010.04.092

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the nanostructure-assisted "Al/SiO2/Ir-silicide-NCs/SiO2/P-Si-sub/Al" stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO2 layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 Vat sweeps of +/- 10 V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 x 10(13) cm(-2), indicating a high trapping efficiency stack for nonvolatile memory application. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7287 / 7290

页数：4

共 17 条

[1] Formation of stacked Ni silicide nanocrystals for nonvolatile memory application [J].

Chen, Wei-Ren ;

Chang, Ting-Chang ;

Liu, Po-Tsun ;

Lin, Po-Sun ;

Tu, Chun-Hao ;

Chang, Chun-Yen .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

[2] Analytical percolation model for predicting anomalous charge loss in flash memories [J].

Degraeve, R ;

Schuler, E ;

Kaczer, B ;

Lorenzini, M ;

Wellekens, D ;

Hendrickx, P ;

van Duuren, M ;

Dormans, GJM ;

Van Houdt, J ;

Haspeslagh, L ;

Groeseneken, G ;

Tempel, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (09) :1392-1400

[3] High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs [J].

Hung, B. F. ;

Wu, C. H. ;

Chin, Albert ;

Wang, S. J. ;

Yen, F. Y. ;

Hou, Y. T. ;

Jin, Y. ;

Tao, H. J. ;

Chen, Shih C. ;

Liang, Mong-Song .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (02) :257-261

[4] Memory characteristics of cobalt-silicide nanocrystals embedded in HfO2 gate oxide for nonvolatile nanocrystal flash devices [J].

Kim, JooHyung ;

Yang, JungYup ;

Lee, JunSeok ;

Hong, JinPyo .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[5] Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method [J].

Lee, Dong Uk ;

Lee, Min Seung ;

Kim, Jae-Hoon ;

Kim, Eun Kyu ;

Koo, Hyun-Mo ;

Cho, Won-Ju ;

Kim, Won Mok .

APPLIED PHYSICS LETTERS, 2007, 90 (09)

[6] Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material [J].

Lee, Hye-Ryoung ;

Choi, Samjong ;

Cho, Kyoungah ;

Kim, Sangsig .

THIN SOLID FILMS, 2007, 516 (2-4) :412-416

[7] Multilevel charge storage in silicon nanocrystal multilayers [J].

Lu, TZ ;

Alexe, M ;

Scholz, R ;

Talelaev, V ;

Zacharias, M .

APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3

[8] Improved charge storage characteristics of the tetralayer non-volatile memory structure using nickel nanocrystal trapping layer [J].

Panda, Debashis ;

Dhar, Achintya ;

Ray, Samit K. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (11)

[9] XPS and factor analysis for investigation of sputter-cleaned surfaces of metal (Re, Ir, Cr)-silicon thin films [J].

Reiche, R ;

Oswald, S ;

Wetzig, K .

APPLIED SURFACE SCIENCE, 2001, 179 (1-4) :316-323

[10] Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals [J].

Shi, Y ;

Saito, K ;

Ishikuro, H ;

Hiramoto, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) :2358-2360

← 1 2 →