Epitaxial growth of n- and p-type ZnCdSe layers and light-emitting diodes

被引：0

作者：

Iwata, H ^{[1
]}

Naniwae, K ^{[1
]}

Yashiki, K ^{[1
]}

机构：

[1] NEC Corp Ltd, Optoelect Res Labs, Tsukuba, Ibaraki 305, Japan

来源：

FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS III | 1998年 / 3285卷

关键词：

wide-bandgap; LED; ZnCdSe; MgZnCdSe; doping;

D O I：

10.1117/12.307611

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Zn0.48Cd0.52Se layers were grown on InP substrates by molecular-beam epitaxy. The n-type carrier concentration was controlled from 3x10(16) cm(-3) to 7x10(18) cm(-3) through the ZnCl2 source cell temperature. Nitrogen doping was performed using a radio-frequency plasma. Capacitance-voltage measurement showed that the ZnCdSe:N layer was p-type with a net acceptor concentration (Na-Nd) of 3.5x10(16) cm(-3). ZnCdSe p-n homojunction light-emitting diodes (LEDs) was fabricated. Orange luminescence intensity peaking at a wavelength of 590 mm was observed at room temperature. Double-heterostructure LEDs with a ZnSeTe contact layer were also fabricated and a higher luminescence intensity than in the homojunction LEDs was observed. The operating voltage ranged from 15 to 20 volts.

引用

页码：18 / 24

页数：7