Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

被引：0

作者：

Kolosov, O. V. ^{[1
]}

DineIli, F. ^{[2
]}

Robson, A. ^{[1
]}

Krier, A. ^{[1
]}

Hayne, M. ^{[1
]}

Fal'ko, V. I.

Henini, M. ^{[3
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] CNR INO, Pisa, Italy

[3] Univ Nottingham, Sch Phys & Astron, Nottingham, England

来源：

2015 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND 2015 IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE (IITC/MAM) | 2015年

基金：

英国工程与自然科学研究理事会;

关键词：

FORCE MICROSCOPY; SUBSURFACE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：43 / 45

页数：3

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