共 17 条
Crystal growth and characterizations of diluted magnetic semiconductor MnxCd1-xIn2Te4
被引:0
作者:
Jie, WQ
[1
]
Chang, YQ
[1
]
An, WJ
[1
]
机构:
[1] Northwestern Polytech Univ, Coll Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
基金:
中国国家自然科学基金;
关键词:
diluted magnetic semiconductor;
Cd1-xMnxIn2Te4;
crystal growth;
magnetic susceptibility;
Kerr effect;
D O I:
10.1016/j.mssp.2005.01.002
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Single crystals of diluted magnetic semiconductor Cd1-xMnxIn2Te4 with x = 0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of alpha + beta(1), alpha + beta + beta(1), beta and In2Te3 + Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of beta-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn2+ ions in the crystal. Meanwhile, the negative rotation angles for x = 0.1 and 0.22 and positive with small values for x = 0.4 were detected. (c) 2005 Elsevier Ltd. All rights reserved.
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页码:564 / 567
页数:4
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