Crystal growth and characterizations of diluted magnetic semiconductor MnxCd1-xIn2Te4

被引:0
作者
Jie, WQ [1 ]
Chang, YQ [1 ]
An, WJ [1 ]
机构
[1] Northwestern Polytech Univ, Coll Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
基金
中国国家自然科学基金;
关键词
diluted magnetic semiconductor; Cd1-xMnxIn2Te4; crystal growth; magnetic susceptibility; Kerr effect;
D O I
10.1016/j.mssp.2005.01.002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single crystals of diluted magnetic semiconductor Cd1-xMnxIn2Te4 with x = 0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of alpha + beta(1), alpha + beta + beta(1), beta and In2Te3 + Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of beta-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn2+ ions in the crystal. Meanwhile, the negative rotation angles for x = 0.1 and 0.22 and positive with small values for x = 0.4 were detected. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:564 / 567
页数:4
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