Crystal growth and characterizations of diluted magnetic semiconductor MnxCd1-xIn2Te4

被引：0

作者：

Jie, WQ ^{[1
]}

Chang, YQ ^{[1
]}

An, WJ ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Coll Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2005年 / 8卷 / 04期

基金：

中国国家自然科学基金;

关键词：

diluted magnetic semiconductor; Cd1-xMnxIn2Te4; crystal growth; magnetic susceptibility; Kerr effect;

D O I：

10.1016/j.mssp.2005.01.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single crystals of diluted magnetic semiconductor Cd1-xMnxIn2Te4 with x = 0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of alpha + beta(1), alpha + beta + beta(1), beta and In2Te3 + Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of beta-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn2+ ions in the crystal. Meanwhile, the negative rotation angles for x = 0.1 and 0.22 and positive with small values for x = 0.4 were detected. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：564 / 567

页数：4

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