Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates

被引：11

作者：

Fieger, M ^{[1
]}

Dikme, Y ^{[1
]}

Jessen, F ^{[1
]}

Kalisch, H ^{[1
]}

Noculak, A ^{[1
]}

Szymakowski, A ^{[1
]}

Von Gemmern, P ^{[1
]}

Faure, B ^{[1
]}

Richtarch, C ^{[1
]}

Letertre, F ^{[1
]}

Heuken, M ^{[1
]}

Jansen, RH ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Theoret Elektrotech, D-52074 Aachen, Germany

来源：

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461451

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

AlGaN/GaN high electron mobility transistors (HEMT) were grown by metal-organic chemical vapor deposition (MOCVD) on SiCOI substrates. These substrates consist Of SiC/SiO2/Si (SiCOI) manufactured by the: Smart Cut (TM) technology, and currently enable up to 3 mu n of GaN to be grown crack-free. The structures were investigated by low-temperature (LT) photoluminescence (PL) measurements (full width of half maximum (FWHM) = 5 meV). Unpassivated transistors with a gate length of 1.4 mu m and a gate width of 2 >, 50 mu m exhibit a maximum drain current density of 540 mA/mm at V-GS = I V and V-DS = 4.5 V in stationary mode with an extrinsic transconductance (g(m)) of 130 mS/mm. The cut-off frequency and maximum frequency of oscillation were 6.7 and 11.6 GHz, respectively. Additionally, these devices allow a high operating voltage VDS which is demonstrated in maximum breakdown voltages higher than 100V.\0 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2607 / 2610

页数：4

共 7 条

[1]

CHUMBES EM, 2001, IEEE T ELECT DEV, V48

[2] Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures [J].

Dang, XZ ;

Wang, CD ;

Yu, ET ;

Boutros, KS ;

Redwing, JM .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2745-2747

[3] Silicon carbide on insulator formation by the Smart-Cut(R) process [J].

DiCioccio, L ;

Letertre, F ;

LeTiec, Y ;

Papon, AM ;

Jaussaud, C ;

Bruel, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3) :349-356

[4] Si(111) as alternative substrate for AlGaN/GaN HEMT [J].

Dikme, Y ;

Fieger, M ;

Jessen, F ;

Szymakowski, A ;

Kalisch, H ;

Woitok, JF ;

van Gemmern, P ;

Javorka, P ;

Marso, M ;

Kaluza, N ;

Jansen, RH ;

Heuken, M .

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :2385-2388

[5]

DIKME Y, 2004, P 12 INT C MET ORG V

[6] Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN [J].

Kumar, V ;

Zhou, L ;

Selvanathan, D ;

Adesida, I .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (03) :1712-1714

[7] Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors [J].

Ohno, Y ;

Nakao, T ;

Kishimoto, S ;

Maezawa, K ;

Mizutani, T .

APPLIED PHYSICS LETTERS, 2004, 84 (12) :2184-2186

← 1 →