The description of charge transfer in fast negative ions scattering on water covered Si(100) surfaces

被引：12

作者：

Chen, Lin ^{[1
,2
]}

Qiu, Shunli ^{[1
,2
]}

Liu, Pinyang ^{[1
,2
]}

Xiong, Feifei ^{[1
,2
]}

Lu, Jianjie ^{[1
,2
]}

Liu, Yuefeng ^{[1
,2
]}

Li, Guopeng ^{[1
,2
]}

Liu, Yiran ^{[1
,2
]}

Ren, Fei ^{[1
,2
]}

Xiao, Yunqing ^{[1
,2
]}

Gao, Lei ^{[1
,2
]}

Zhao, Qiushuang ^{[1
,2
]}

Ding, Bin ^{[1
,2
]}

Li, Yuan ^{[1
,2
]}

Guo, Yanling ^{[1
,2
]}

Chen, Ximeng ^{[1
,2
]}

机构：

[1] Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China

[2] Lanzhou Univ, Minist Educ, Key Lab Special Funct Mat & Struct Design, Lanzhou 730000, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2016年 / 387卷

基金：

中国国家自然科学基金;

关键词：

Charge transfer; Semiconductor surface; Doping; Ion scattering; Negative ion; Positive ion; IN-SITU OBSERVATION; PROJECTED BAND-GAP; AUGER NEUTRALIZATION; OPTICAL-PROPERTIES; SILICON; EXCHANGE; HYDROGEN; ADSORPTION; COLLISIONS; ABSOLUTE;

D O I：

10.1016/j.apsusc.2016.06.132

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Doping has significantly affected the characteristics and performance of semiconductor electronic devices. In this work, we study the charge transfer processes for 8.5-22.5 keV C- and F- ions scattering on H2O-terminated p-type Si(100) surfaces with two different doping concentrations. We find that doping has no influence on negative-ion formation for fast collisions in this relatively high energy range. Moreover, we build a model to calculate negative ion fractions including the contribution from positive ions. The calculations support the nonadiabatic feature of charge transfer. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：1174 / 1182

页数：9

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