1/f noise in CMOS transistors for analog applications

被引：112

作者：

Nemirovsky, Y ^{[1
]}

Brouk, I

Jakobson, CG

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Dept Biomed Engn, IL-32000 Haifa, Israel

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 05期

关键词：

analog circuits; CMOS transistors; low noise; 1/f noise;

D O I：

10.1109/16.918240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Noise measurements of the 1/f noise in PMOS and NMOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two "low noise" CMOS processes of 2 mum and 0.5 mum technologies are compared and it is found that the more advanced process, with 0.5 mum technology, exhibits significantly reduced 1/f noise, due to optimized processing. The input referred noise and the power spectral density (PSD) of the drain current 1/f noise are modeled in saturation as well as in subthreshold and are compared with the common empirical approaches such as the SPICE models. The results of this study are useful to the design and modeling of 1/f noise of CMOS analog circuits.

引用

页码：921 / 927

页数：7

共 24 条

[1]

[Anonymous], 1957, SEMICONDUCTOR SURFAC

[2] FLICKER NOISE IN CMOS TRANSISTORS FROM SUBTHRESHOLD TO STRONG INVERSION AT VARIOUS TEMPERATURES [J].

CHANG, JM ;

ABIDI, AA ;

VISWANATHAN, CR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1965-1971

[3] 1/F NOISE AND RADIATION EFFECTS IN MOS DEVICES [J].

FLEETWOOD, DM ;

MEISENHEIMER, TL ;

SCHOFIELD, JH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1953-1964

[4] Schottky-clamped NMOS transistors implemented in a conventional 0.8-μm CMOS process [J].

Huang, FJ ;

O, KK .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (09) :326-328

[5] 1/f noise in CMOS transistors for analog applications from subthreshold to saturation [J].

Jakobson, C ;

Bloom, I ;

Nemirovsky, Y .

SOLID-STATE ELECTRONICS, 1998, 42 (10) :1807-1817

[6] Low-frequency 1/f noise model for short-channel LDD MOSFETs [J].

Jang, SL ;

Chen, HK ;

Hu, MC .

SOLID-STATE ELECTRONICS, 1998, 42 (06) :891-899

[7] INDIVIDUAL DEFECTS AT THE SI-SIO2 INTERFACE [J].

KIRTON, MJ ;

UREN, MJ ;

COLLINS, S ;

SCHULZ, M ;

KARMANN, A ;

SCHEFFER, K .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) :1116-1126

[8] NOISE IN SOLID-STATE MICROSTRUCTURES - A NEW PERSPECTIVE ON INDIVIDUAL DEFECTS, INTERFACE STATES AND LOW-FREQUENCY (1/F) NOISE [J].

KIRTON, MJ ;

UREN, MJ .

ADVANCES IN PHYSICS, 1989, 38 (04) :367-468

[9]

MCWHORTER AL, 1955, THESIS MIT LEXINGTON

[10] Conductance modulation of submicrometer metal-oxide-semiconductor field-effect transistors by single-electron trapping [J].

Mueller, HH ;

Schulz, M .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :4178-4186

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