TiS3 Transistors with Tailored Morphology and Electrical Properties

被引：206

作者：

Island, Joshua O. ^{[1
]}

Barawi, Mariam ^{[2
]}

Biele, Robert ^{[3
]}

Almazan, Adrian ^{[4
]}

Clamagirand, Jose M. ^{[2
]}

Ares, Jose R. ^{[2
]}

Sanchez, Carlos ^{[2
,5
]}

van der Zant, Herre S. J. ^{[1
]}

Alvarez, Jose V. ^{[4
,5
,6
]}

D'Agosta, Roberto ^{[3
,7
]}

Ferrer, Isabel J. ^{[2
,5
]}

Castellanos-Gomez, Andres ^{[1
,8
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] Univ Autonoma Madrid, MIRE Grp, Dept Fis Mat, E-28049 Madrid, Spain

[3] Univ Basque Country, ETSF Sci Dev Ctr, Dept Fis Mat, E-20018 San Sebastian, Spain

[4] Univ Autonoma Madrid, Dept Fis Materia Condesada, E-28049 Madrid, Spain

[5] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain

[6] Univ Autonoma Madrid, IFIMAC, E-28049 Madrid, Spain

[7] Basque Fdn Sci, Ikerbasque, E-48013 Bilbao, Spain

[8] Inst Madrileno Estudios Avanzados Nanociencia IMD, Madrid 28049, Spain

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 16期

关键词：

density functional theory; exfoliation potential; field-effect transistors; mechanical exfoliation; monolayers; morphology; sulphur vacancy; TiS3; THIN-LAYERS; MOS2; SURFACE; DISULFIDE; GROWTH; STATES; GAP;

D O I：

10.1002/adma.201405632

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：2595 / 2601

页数：7

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