Spectroscopic study using FTIR, Raman, XPS and NEXAFS of carbon nitride thin films deposited by RF magnetron sputtering

被引：37

作者：

Bouchet-Fabre, B ^{[1
]}

Marino, E

Lazar, G

Zellama, K

Clin, M

Ballutaud, D

Abel, F

Godet, C

机构：

[1] CEA Saclay, LFP, SPAM, F-91191 Gif Sur Yvette, France

[2] Fac Sci, LPMC, F-80039 Amiens, France

[3] CNRS, LPSC, F-92100 Boulogne, France

[4] Univ Paris 06, GPS, F-75005 Paris, France

[5] Univ Paris 07, GPS, F-75005 Paris, France

[6] Ecole Polytech, LPICM, F-91128 Palaiseau, France

来源：

THIN SOLID FILMS | 2005年 / 482卷 / 1-2期

关键词：

amorphous carbon; NEXAFS; XPS; IR; Raman spectroscopy; electrical conductivity;

D O I：

10.1016/j.tsf.2004.11.166

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spectroscopic study of a-CNx thin films deposited by R.F. magnetron sputtering is reported. The bonding structure was determined using FTIR, Raman Scattering, NEXAFS and XPS results. The combination of the FTIR and Raman spectroscopy using the vibrational properties and the XPS and NEXAFS using the electronic properties of the materials is useful for a good description of the local structure in carbon nitride. The investigation is focused on the effect of the RF power and substrate temperature on the nitrogen surrounding in carbon nitride thin films. A good correlation is observed between the evolution of the pi* electron states as calculated from NEXAFS, the evolution of the sp(2) bonding of carbon observed in XPS, and the evolution of the electrical and optical properties of the films. These results combined with FTIR and Raman analysis and the elemental composition determined by nuclear microanalysis allow to follow the evolution of the local structure with the deposition conditions in a-CNx films. (c) 2004 Elsevier B.V All rights reserved.

引用

页码：167 / 171

页数：5

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