Self-induced voltage oscillations during anodic etching of n-InP and possible applications for three-dimensional microstructures

被引：68

作者：

Langa, S ^{[1
]}

Carstensen, J

Tiginyanu, IM

Christophersen, M

Föll, H

机构：

[1] Univ Kiel, Fac Engn, Dept Mat Sci, D-24143 Kiel, Germany

[2] Tech Univ Moldova, Inst Appl Phys, Lab Low Dimens Semicond Struct, Chisinau 2004, Moldova

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2001年 / 4卷 / 06期

关键词：

D O I：

10.1149/1.1370417

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous modulation of the diameters of pores on large areas of the samples which indicates a correlation between the phases of the oscillations in the pores. These self-induced diameter oscillations may be useful for three-dimensional microstructuring of n-InP and thus for the design and fabrication of new photonic materials. (C) 2001 The Electrochemical Society.

引用

页码：G50 / G52

页数：3

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