A 68% Efficiency, C-Band 100W GaN Power Amplifier for Space Applications

被引：0

作者：

Yamasaki, T. ^{[1
]}

Kittaka, Y. ^{[3
]}

Minamide, H. ^{[1
]}

Yamauchi, K. ^{[2
]}

Miwa, S. ^{[1
]}

Goto, S. ^{[1
]}

Nakayama, M. ^{[1
]}

Kohno, M. ^{[1
]}

Yoshida, N. ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, High Frequency & Opt Device Works, 4-1 Mizuhara, Itami, Hyogo 6648641, Japan

[2] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura, Kanagawa 2478501, Japan

[3] Wave Technol Inc, Kawanishi, Hyogo 6660024, Japan

来源：

2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年

关键词：

GaN HEMT; High power amplifiers; High efficiency; High reliability; Satellite communication;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a high efficiency (68%), high output power (100W), high reliability GaN HEMT amplifier for C-band space applications. The high efficiency is achieved by 2nd-harmonic frequency (2f(0)) tuning circuits in the input and output matching circuits. The input circuit uses open-ended stubs located nearby FET gate terminals for setting the 2f(o) reflection-phase at the optimum phase. In the output circuit, the optimum 2fo reflection phase is realized using three transmission-line transformers while matching loss is kept low at fundamental frequency. In addition, a 3000 hour's RF overdrive life test reveals that an estimated mean time to failure (MTTF) is 1x10(7) hours at 150 degrees C channel temperature, proving that the amplifier has sufficient reliability for space applications. To the best of our knowledge, the efficiency of 68% is the highest of 100-W class C-band amplifiers ever reported, and is also comparable to that of commercially available traveling wave tube amplifiers.

引用

页码：1384 / 1387

页数：4

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