Tunneling in HTS junctions

被引：3

作者：

Shukrinov, YM ^{[1
]}

Stetsenko, A ^{[1
]}

Nasrulloev, K ^{[1
]}

Kohandel, M ^{[1
]}

机构：

[1] Phys Tech Inst, Dushanbe 734063, Tajikistan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1998年 / 8卷 / 03期

关键词：

current-voltage characteristics; high-temperature superconductivity; layered models; tunneling;

D O I：

10.1109/77.712146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects caused by the layered structure of high-temperature superconductors (HTS) ought to be taken into consideration at the time of constructing different HTS junction devices. The authors demonstrate this by studying tunneling phenomena in HTS, The tunneling current-voltage characteristics of different structures such as "Normal Metal-Insulator-HTS'' (NIS-structure) and "HTS-Insulator-HTS'' (SIS-structure) are calculated. The real layered structure of I-ITS is taken into account and corresponding peculiarities on I(V) are obtained. The authors have analyzed different types of contacts which are realized in the NIS- and SIS-junctions. The contributions of the superconducting and normal layers of HTS to the tunneling current of NIS- and SIS-structures are found.

引用

页码：142 / 145

页数：4

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