The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering (vol 305, pg 201, 1997)

被引:1
作者
Park, KC
Ma, DY
Kim, KH [1 ]
机构
[1] Gyeongsang Natl Univ, Dept Elect Mat Engn, Chinju 660701, South Korea
[2] Gyeongsang Natl Univ, Res Ctr Aircraft Parts Technol, Chinju 660701, South Korea
[3] Gyeongsang Natl Univ, Dept Phys, Chinju 660701, South Korea
[4] Gyeongsang Natl Univ, Res Inst Nat Sci, Chinju 660701, South Korea
关键词
D O I
10.1016/S0040-6090(98)00826-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:329 / 329
页数:1
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[1]   The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering [J].
Park, KC ;
Ma, DY ;
Kim, KH .
THIN SOLID FILMS, 1997, 305 (1-2) :201-209