Time evolution of photoluminescence response from porous silicon in hydrocarbon gas sensing

被引：0
作者：
Dian, J
Holec, T
Jelínek, I
Jindrich, J
Valenta, J
Pelant, I
机构：
[1] Charles Univ, Fac Math & Phys, Dept Chem Phys & Opt, CZ-12116 Prague, Czech Republic
[2] Charles Univ, Fac Sci, Dept Analyt Chem, CZ-12840 Prague, Czech Republic
[3] Charles Univ, Fac Sci, Dept Organ Chem, CZ-12840 Prague, Czech Republic
[4] Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague, Czech Republic
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2000年 / 182卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200011)182:1<485::AID-PSSA485>3.0.CO;2-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A photoluminescence (PL) response (S-band) of porous silicon to specific amounts of organic vapors of n-hexane, toluene and methanol in gas phase reveals the presence of two reversible processes: one relatively fast responsible for. PL quenching and one relatively slow which is responsible for a remarkable PL enhancement. The last PL quenching (with time constant of several seconds) can be utilized for sensing the studied organic vapors within a concentration range of about 1-500 ppm.
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页码：485 / 488
页数：4
相关论文
共 10 条
[1]   ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE [J].
CANHAM, LT ;
HOULTON, MR ;
LEONG, WY ;
PICKERING, C ;
KEEN, JM .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :422-431
[2]   STERIC CONSIDERATIONS IN THE AMINE-INDUCED QUENCHING OF LUMINESCENT POROUS SILICON [J].
CHANDLERHENDERSON, RR ;
SWERYDAKRAWIEC, B ;
COFFER, JL .
JOURNAL OF PHYSICAL CHEMISTRY, 1995, 99 (21) :8851-8855
[3]   SURFACE METHOXYLATION AS THE KEY FACTOR FOR THE GOOD PERFORMANCE OF N-SI/METHANOL PHOTOELECTROCHEMICAL CELLS [J].
CHAZALVIEL, JN .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1987, 233 (1-2) :37-48
[4]   Sensitivity of porous silicon photoluminescence to low concentrations of CH4 and CO [J].
Di Francia, G ;
La Ferrara, V ;
Quercia, L ;
Faglia, G .
JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) :287-290
[5]  
FELLAH S, 1999, J LUMIN, V80, P105
[6]   Photoluminescence quenching and the photochemical oxidation of porous silicon by molecular oxygen [J].
Harper, J ;
Sailor, MJ .
LANGMUIR, 1997, 13 (17) :4652-4658
[7]   Effects of SO2 and I-2 on the photoluminescence of oxidized porous silicon [J].
Kelly, MT ;
Bocarsly, AB .
CHEMISTRY OF MATERIALS, 1997, 9 (07) :1659-1664
[8]   REVERSIBLE LUMINESCENCE QUENCHING OF POROUS SI BY SOLVENTS [J].
LAUERHAAS, JM ;
CREDO, GM ;
HEINRICH, JL ;
SAILOR, MJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1992, 114 (05) :1911-1912
[9]   GAS-SENSING PROPERTIES OF POROUS SILICON [J].
SCHECHTER, I ;
BENCHORIN, M ;
KUX, A .
ANALYTICAL CHEMISTRY, 1995, 67 (20) :3727-3732
[10]   Vapor sensitivity of thin porous silicon layers [J].
Zangooie, S ;
Bjorklund, R ;
Arwin, H .
SENSORS AND ACTUATORS B-CHEMICAL, 1997, 43 (1-3) :168-174
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