High performance quantum dot lasers on GaAs substrates operating in 1.5μm range

被引：148

作者：

Ledentsov, NN

Kovsh, AR

Zhukov, AE

Maleev, NA

Mikhrin, SS

Vasil'ev, AP

Sernenova, ES

Maximov, MV

Shernyakov, YM

Kryzhanovskaya, N

Ustinov, V

Bimberg, D

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 15期

关键词：

Quantum dot lasers;

D O I：

10.1049/el:20030753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs-InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy. High quantum efficiency (eta(i) > 60%) and low internal losses (alpha < 3-4 cm(-1)) are realised. The transparency current density per single QD layer is estimated as similar to70 A/cm(2) and the characteristic temperature is 60 K (20-85degreesC). The emission wavelength exceeds 1.51 mum at temperatures above 60degreesC.

引用

页码：1126 / 1128

页数：3

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