High-voltage extension (VBR ≥ 800 V) for smart-power SOI-technologies

被引：5

作者：

Rotter, T ^{[1
]}

Stoisiek, M ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, LEB, D-91058 Erlangen, Germany

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the experimental verification for the incorporation of high-voltage devices (VBR greater than or equal to 800 V) within industrial smart-power SOI technologies of only low blocking capability (VBR < 150 V) together with properties of a new, ingenious device concept for universal bipolar switches (UBS) are discussed.

引用

页码：447 / 450

页数：4

共 7 条

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[6] STOISIEK M, 1995, ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P325, DOI 10.1109/ISPSD.1995.515058
[7] ANISOTROPIC ETCHING OF SILICON IN TMAH SOLUTIONS
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