Fine modification of reactively sputtered NiOx hole transport layer for application in all-inorganic CsPbI2Br perovskite solar cells

被引:35
作者
Pan, L. [1 ]
Liu, C. [2 ]
Zhu, H. [2 ]
Wan, M. [2 ]
Li, Y. [1 ]
Mai, Y. [2 ]
机构
[1] Wuyi Univ, Jiangmen 529020, Peoples R China
[2] Jinan Univ, Coll Informat Sci & Technol, Inst New Energy Technol, Guangzhou 510632, Peoples R China
基金
中国国家自然科学基金;
关键词
NiOx; Reactive sputtering; Perovskite solar cells; NICKEL-OXIDE; ELECTRONIC-STRUCTURE; HIGHLY EFFICIENT; ELECTROCHROMIC FILMS; OPTICAL-PROPERTIES; ULTRA-THIN; OXYGEN; DEPOSITION;
D O I
10.1016/j.solener.2019.12.056
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this study, nickel oxide (NiOx) thin films were prepared by direct current (DC) reactive magnetron sputtering. The various properties of NiOx thin films including deposition rate, morphology, electrical and optical properties as well as grain structure and chemical composition were systematically investigated. The material properties of NiOx were finely modified under the monitoring of target voltage during sputtering. NiOx thin films were applied as hole transport layers (HTLs) in all-inorganic CsPbI2Br perovskite solar cells (PSCs). The highest efficiency of 12.6% had been achieved for the optimized all-inorganic CsPbI2Br PSCs with the inverted structure of Glass/FTO/NiOx(HTL)/CsPbI2Br/ZnO@C-60 (electron transport layer, ETL)/Ag. The PSC still yielded over 90% of its initial power output after 10 h operation without encapsulation.
引用
收藏
页码:521 / 529
页数:9
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