Impact of oxygen atmosphere on piezoelectric properties of CaBi2Nb2O9 thin films

被引：34
作者：
Simoes, A. Z.
Riccardi, C. S.
Cavalcante, L. S.
Longo, E.
Varela, J. A.
Mizaikoff, B.
机构：
[1] Univ Estadual Paulista, Inst Quim, Dept Fisico Quim, Lab Interdisciplinar Ceram, BR-14801907 Araraquara, SP, Brazil
[2] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil
[3] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
来源：
ACTA MATERIALIA | 2007年 / 55卷 / 14期
基金：
巴西圣保罗研究基金会;
关键词：
piezoelectricity; vacancies; point defects; CaBi2Nb2O9; x-ray photoelectron spectroscopy;
D O I：
10.1016/j.actamat.2007.04.030
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CaBi2Nb2O9 (CBNO) thin films were deposited on platinum-coated silicon substrates by the polymeric precursor method, and were annealed in air and in an oxygen atmosphere. The structure, surface morphology and electrical properties of CBNO thin films have been investigated. The presence of an oxygen atmosphere during crystallization of the films affected the structure perfection and morphology, as well as ferroelectric and piezoelectric properties. A reduction in P-r and piezoelectric coefficient, an increase of V-c and displacement of the Curie point is evident in the films crystallized in an oxygen atmosphere. The impact of exposure to the oxygen atmosphere on the creation of defects caused by bismuth and oxygen vacancies between layers was also investigated by X-ray photoelectron spectroscopy. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：4707 / 4712
页数：6
相关论文
共 22 条
[1]   Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol-gel method [J].
Bae, JC ;
Kim, SS ;
Choi, EK ;
Song, TK ;
Kim, WJ ;
Lee, YI .
THIN SOLID FILMS, 2005, 472 (1-2) :90-95
[2]   Characterisation of BaBi2Nb2O9 powders and thin films prepared by a solution synthesis technique [J].
Bencan, A ;
Boullay, P ;
Mercurio, JP .
SOLID STATE SCIENCES, 2004, 6 (06) :547-551
[3]  
Cho HS, 1997, PHYS STATUS SOLIDI A, V161, P371, DOI 10.1002/1521-396X(199706)161:2<371::AID-PSSA371>3.0.CO
[4]  
2-X
[5]   Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics [J].
Damjanovic, D .
REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (09) :1267-1324
[6]   Materials for high temperature piezoelectric transducers [J].
Damjanovic, D .
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 1998, 3 (05) :469-473
[7]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[8]   Highly oriented ferroelectric CaBi2Nb2O9 thin films deposited on Si(100) by pulsed laser deposition [J].
Desu, SB ;
Cho, HS ;
Joshi, PC .
APPLIED PHYSICS LETTERS, 1997, 70 (11) :1393-1395
[9]  
DESU SB, 1996, FERROELECTRIC THIN F, P305
[10]  
GIBBS GV, 1993, XPOWPLOT VERSION 2 0
123