Inductively coupled plasma etching of high aspect ratio two-dimensional photonic crystals in Al-rich AlGaAs and AlGaAsSb

被引：10

作者：

Larrue, A. ^{[1
,2
]}

Belharet, D. ^{[1
,2
]}

Dubreuil, P. ^{[1
,2
]}

Bonnefont, S. ^{[1
,2
]}

Gauthier-Lafaye, O. ^{[1
,2
]}

Monmayrant, A. ^{[1
,2
]}

Lozes-Dupuy, F. ^{[1
,2
]}

Moumdji, S. ^{[1
,2
,3
]}

机构：

[1] LAAS, CNRS, F-31077 Toulouse 4, France

[2] Univ Toulouse, UPS, INSA, INP,ISAE,UT1,UTM,LAAS, F-31077 Toulouse 4, France

[3] Univ Montpellier 2, IES, CNRS, UMR 5214,CC067, F-34095 Montpellier, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 02期

关键词：

CAVITY LASERS; WAVE-GUIDES; HARD MASK; GAAS; FABRICATION; INP; MIRRORS; CHEMISTRY; MODULATOR; SIDEWALL;

D O I：

10.1116/1.3549125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Planar two-dimensional photonic crystals are key tools for the development of advanced optoelectronic devices. However, their practical realization often requires deep etching of air holes with high aspect ratio. In this article, the authors report on a time-multiplexed inductively coupled plasma reactive ion etching technique, allowing deep etching of AlGaAs and AlGaAsSb heterostructures. Air holes of 130 nm wide and 1.85 mu m deep have been realized in AlGaAs heterostructures with up to 60% Al. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3549125]

引用

页数：7

共 30 条

[1] Effect of sidewall passivation in BCl3/N2 inductively coupled plasma etching of two-dimensional GaAs photonic crystals
Atlasov, Kirill A.
Gallo, Pascal
Rudra, Alok
Dwir, Benjamin
Kapon, Eli
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (05): : L21 - L24
[2] Deeply etched two-dimensional photonic crystals fabricated on GaAs/AlGaAs slab waveguides by using chemically assisted ion beam etching
Avary, K
Reithmaier, JP
Klopf, F
Happ, T
Kamp, M
Forchel, A
[J]. MICROELECTRONIC ENGINEERING, 2002, 61-2 : 875 - 880
[3] Reactive ion etching of deeply etched DBR-structures with reduced air-gaps for-highly reflective monolithically integrated laser mirrors
Avary, K
Rennon, S
Klopf, F
Reithmaier, JP
Forchel, A
[J]. MICROELECTRONIC ENGINEERING, 2001, 57-8 : 593 - 598
[4] Inductively coupled plasma etching of GaAs suspended photonic crystal cavities
Braive, R.
Le Gratiet, L.
Guilet, S.
Patriarche, G.
Lemaitre, A.
Beveratos, A.
Robert-Philip, I.
Sagnes, I.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (04): : 1909 - 1914
[5] Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP
Carlstrom, C. F.
van der Heijden, R.
Andriesse, M. S. P.
Karouta, F.
van der Heijden, R. W.
van der Drift, E.
Salemink, H. W. M.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (05): : 1675 - 1683
[6] Capacitor-embedded 0.54 pJ/bit silicon-slot photonic crystal waveguide modulator
Chen, Xiaonan
Chen, Yun-Sheng
Zhao, Yang
Jiang, Wei
Chen, Ray T.
[J]. OPTICS LETTERS, 2009, 34 (05) : 602 - 604
[7] Deep reactive ion etching as a tool for nanostructure fabrication
Fu, Y. Q.
Colli, A.
Fasoli, A.
Luo, J. K.
Flewitt, A. J.
Ferrari, A. C.
Milne, W. I.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (03): : 1520 - 1526
[8] Low bias reactive ion etching of GaAs with a SiCl4/N2/O2 time-multiplexed process
Golka, S.
Schartner, S.
Schrenk, W.
Strasser, G.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (03): : 839 - 844
[9] Nanofabrication of two-dimensional photonic crystal mirrors for 1.5 μm short cavity lasers
Happ, TD
Markard, A
Kamp, M
Forchel, A
Anand, S
Gentner, JL
Bouadma, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2775 - 2778
[10] 850 nm wavelength range nanoscale resonant optical filter fabrication using standard microelectronics techniques
Hernandez, S.
Bouchard, O.
Scheid, E.
Daran, E.
Jalabert, L.
Arguel, P.
Bonnefont, S.
Gauthier-Lafaye, O.
Lozes-Dupuy, F.
[J]. MICROELECTRONIC ENGINEERING, 2007, 84 (04) : 673 - 677

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