Spin effects in InAs self-assembled quantum dots

被引：2
|
作者：
dos Santos, Ednilson C. [1 ]
Gobato, Yara Galvao [1 ]
Brasil, Maria J. S. P. [2 ]
Taylor, David A. [3 ]
Henini, Mohamed [3 ]
机构：
[1] Univ Fed Sao Carlos, Dept Phys, BR-13560 Sao Carlos, SP, Brazil
[2] Univ Estadual Campinas, Inst Phys, Campinas, SP, Brazil
[3] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, England
来源：
NANOSCALE RESEARCH LETTERS | 2011年 / 6卷
关键词：
COMPUTATION; INJECTION;
D O I：
10.1186/1556-276X-6-115
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.
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页数：5
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