Epitaxial growth of large pentacene crystals on Si(001) surfaces functionalized with molecular monolayers

被引:10
|
作者
Weidkamp, Kevin P.
Tromp, Rudolf M.
Hamers, Robert J.
机构
[1] Univ Wisconsin, Dept Chem, Madison, WI 53706 USA
[2] IBM Res Div, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2007年 / 111卷 / 44期
关键词
D O I
10.1021/jp074560x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The nucleation and growth of pentacene thin films are controlled largely by the energies associated with the interfaces. We have used low-energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) to investigate the nucleation and growth of pentacene thin films on Si(001) surfaces modified with two different molecular monolayers. Clean Si(001)-(2 x 1) surfaces were modified with either 1,5cyclooctadiene or 1-dodecene prior to pentacene growth to study the effects of exposed pi bonds at the interface, orientation of those pi bonds relative to each other, and rigidity of the molecular layer on pentacene nucleation, growth, and crystalline orientation. Both molecular monolayers weaken the substrate - pentacene interaction sufficiently to allow for low pentacene nucleation density and good pentacene diffusion, leading to the growth of pentacene grains as large as 100 mu m. Pentacene grows epitaxially on both functionalized surfaces, adopting an orthorhombic unit cell that follows the orientation of the underlying Si surface reconstruction. Our results show that in addition to improving the ultimate size of pentacene crystals, molecular monolayers are able to impose the substrate orientation on pentacene nuclei and thereby control the crystalline orientation of the thin film.
引用
收藏
页码:16489 / 16497
页数:9
相关论文
共 50 条
  • [21] Epitaxial film growth of zirconium diboride on Si(001)
    Roucka, R
    Tolle, J
    Chizmeshya, AVG
    Tsong, IST
    Kouvetakis, J
    JOURNAL OF CRYSTAL GROWTH, 2005, 277 (1-4) : 364 - 371
  • [22] Epitaxial growth of cubic GaN and AlN on Si(001)
    Barski, A
    Rossner, U
    Rouviere, JL
    Arlery, M
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1996, 1 (1-46): : U171 - U175
  • [23] Characterization of epitaxial MgO growth on Si(001) surface
    Abukawa, Tadashi
    Sato, Shunsuke
    Matsuoka, Youta
    SURFACE SCIENCE, 2010, 604 (19-20) : 1614 - 1618
  • [24] Epitaxial growth of largely mismatched crystals on H-terminated Si(111) surfaces
    Asaoka, Hidehito
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (47)
  • [25] Electrical properties of diamond surfaces functionalized with molecular monolayers
    Tse, KY
    Nichols, BM
    Yang, WS
    Butler, JE
    Russell, JN
    Hamers, RJ
    JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (17): : 8523 - 8532
  • [26] EPITAXIAL-GROWTH MECHANISM AT SB STEPS OF SI(001) SURFACES BY PHOTOINDUCED SI(1D) ATOMS
    TSUDA, M
    OIKAWA, S
    FURUKAWA, S
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 556 - 560
  • [27] Atomic and molecular processes on Si(001) and Si(111) surfaces
    Terakura, K
    Yamasaki, T
    Uda, T
    Stich, I
    SURFACE SCIENCE, 1997, 386 (1-3) : 207 - 215
  • [28] Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(001) surfaces
    Nguyen, LH
    LeThanh, V
    Débarre, D
    Yam, V
    Halbwax, M
    El Kurdi, M
    Bouchier, D
    Rosner, P
    Becker, M
    Benamara, M
    Strunk, HP
    APPLIED SURFACE SCIENCE, 2004, 224 (1-4) : 134 - 138
  • [29] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI(001) - A MONTE-CARLO STUDY
    KERSULIS, S
    MITIN, V
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (05) : 653 - 659
  • [30] Molecular beam epitaxial growth of stress-released GaAs layers on Si(001) substrates
    Ogasawara, Kazuto
    Kondo, Kazuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (09): : 1736 - 1738