Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC

被引：3

作者：

Pernot, J ^{[1
]}

Contreras, S ^{[1
]}

Camassel, J ^{[1
]}

Robert, JL ^{[1
]}

机构：

[1] CNRS, Etud Semicond Grp, UM2, UMR 5650, F-34095 Montpellier, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

p-type; 4H-SiC; aluminium implantation; Hall effect measurements;

D O I：

10.4028/www.scientific.net/MSF.483-485.401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 +/- 10 %) with apparition of a large number of compensating centres in the implanted layers.

引用

页码：401 / 404

页数：4

共 8 条

[1] Activation of aluminum implanted at high doses in 4H-SiC [J].

Bluet, JM ;

Pernot, J ;

Camassel, J ;

Contreras, S ;

Robert, JL ;

Michaud, JF ;

Billon, T .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :1971-1977

[2] Aluminum-implantation-induced deep levels in n-type 6H-SiC [J].

Fung, S ;

Gong, M ;

Beling, CD ;

Brauer, G ;

Wirth, H ;

Skorupa, W .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (02) :1152-1154

[3] p-type doping of SiC by high dose Al implantation - Problems and progress [J].

Heera, V ;

Panknin, D ;

Skorupa, W .

APPLIED SURFACE SCIENCE, 2001, 184 (1-4) :307-316

[4] Temperature-dependent Hall effect measurements in low-compensated p-type 4H-SiC [J].

Kasamakova-Kolaklieva, L ;

Storasta, L ;

Ivanov, IG ;

Magnusson, B ;

Contreras, S ;

Consejo, C ;

Pernot, J ;

Zielinski, M ;

Janzén, E .

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 :677-680

[5] Silicon carbide technology in new era [J].

Matsunami, H .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :3-8

[6] Deep-level transient spectroscopy study on double implanted n+-p and p+-n 4H-SiC diodes [J].

Mitra, S ;

Rao, MV ;

Papanicolaou, N ;

Jones, KA ;

Derenge, M ;

Holland, OW ;

Vispute, RD ;

Wilson, SR .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (01) :69-75

[7]

Pensl G, 2002, MATER SCI FORUM, V433-4, P365, DOI 10.4028/www.scientific.net/MSF.433-436.365

[8]

Schmid F, 2004, ADV TEXTS PHYS, P517

← 1 →