Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film

被引：0

作者：

Ghosh, Joydeep ^{[1
]}

Osintsev, Dmitry ^{[1
]}

Sverdlov, Viktor ^{[1
]}

Selberherr, Siegfried ^{[1
]}

机构：

[1] TU Wien, Inst Microelect, Gusshausstr 27-29-E360, A-1040 Vienna, Austria

来源：

2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年

关键词：

Spin relaxation in silicon; spin-orbit interaction; valley-orbit interaction; spin injection; k . p model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron spin properties are promising for future spin-driven applications. Silicon, the major material of microelectronics, also appears to be a perfect material for spintronic applications. The peculiarities of the subband structure and details of the spin propagation in ultra-thin silicon films in presence of the spin-orbit interaction and strain are investigated. The application of shear strain dramatically reduces the spin relaxation in such films. We investigate in detail, how spin injection in any arbitrary direction modifies the spin relaxation matrix elements, and finally the spin lifetime in the samples. We demonstrate a two-fold enhancement of spin lifetime, when spin is injected in-plane of the sample, compared to that, when injected along the perpendicular-plane direction.

引用

页码：277 / 280

页数：4

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