A 1/2.7-in 2.96 MPixel CMOS image sensor with double CDS architecture for full high-definition camcorders

被引：17

作者：

Takahashi, Hidekazu ^{[1
]}

Noda, Tomoyuki ^{[1
]}

Matsuda, Takashi ^{[1
]}

Watanabe, Takanori ^{[1
]}

Shinohara, Mahito ^{[1
]}

Endo, Toshiaki ^{[1
]}

Takimoto, Shunsuke ^{[1
]}

Mishima, Ryuichi ^{[1
]}

Nishimura, Shigeru ^{[1
]}

Sakurai, Katsuhito ^{[1
]}

Yuzurihara, Hiroshi ^{[1
]}

Inoue, Shunsuke ^{[1
]}

机构：

[1] Canon Inc, Ctr Semicond Design & Dev, Kanagawa 2521124, Japan

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2007年 / 42卷 / 12期

关键词：

CMOS image sensor; column amplifier; double CDS; double microlenses; high definition (HD); high speed;

D O I：

10.1109/JSSC.2007.908719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1/2.7-in 1944 x 1484 pixel CMOS image sensor with double CDS architecture fabricated in a 0.18-mu m single-poly triple-metal (1P3M) CMOS process is described. It operates at 48 MHz in a progressive scanning mode at 60 frames/s for full high-definition (HD) imaging. Two transistors/pixel architecture and low optical stack with double microlenses achieve 14.6ke(-)/lx center dot s sensitivity and 14ke(-) saturation. Double CDS architecture with a high-gain column amplifier realized a low noise floor of 3.5e(rms)(-). Optimized shallow-trench isolation achieved very low dark current of 12.2e(-)/s (60 degrees C). This image sensor also realizes low power consumption of 220 mW.

引用

页码：2960 / 2967

页数：8

共 15 条

[11]

Nitta Y., 2006, IEEE INT SOL STAT CI, P2024

[12]

SHINOHARA M, 2003, Patent No. 200351989

[13] A 3.9-μm pixel pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/pixel [J].

Takahashi, H ;

Kinoshita, M ;

Morita, K ;

Shirai, T ;

Sato, T ;

Kimura, T ;

Yuzurihara, H ;

Inoue, S ;

Matsumoto, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (12) :2417-2425

[14]

YAMADA T, 2003, IEEE WORKSH CHARG DE

[15]

YOSHIHARA S, 2006, ISSCC, P492

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