Effects of current density and temperature on Sn/Ni interfacial reactions under current stressing

被引:51
作者
Wang, Chao-Hong [1 ]
Kuo, Chun-yi [1 ]
Chen, Hsien-hsin [1 ]
Chen, Sinn-wen [2 ]
机构
[1] Natl Chung Cheng Univ, Dept Chem Engn, Chiayi 621, Taiwan
[2] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 300, Taiwan
关键词
Intermetallics miscellaneous; Bonding; Phase transformation; joining; FAILURE MECHANISMS; SOLDER BUMPS; ELECTROMIGRATION; COUPLES; SN/CU; NI;
D O I
10.1016/j.intermet.2010.09.010
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This research studied the electromigration effects on Sn/Ni/Sn sandwich-type couple interfacial reactions with various electric current densities at different temperatures The Sn/Ni cathode side is always formed with a uniform Ni3Sn4 layer At the opposite Ni/Sn anode interface either Ni3Sn4 or NiSn4 could form which depends on the reaction temperatures and current densities The results reveal that with a current density of 1000 A/cm(2) at 180 degrees C, the Ni3Sn4 phase remains layer-structured As the applied current exceeds 2000 A/cm(2) Ni atoms are driven by electromigration force to migrate Into the Sn matrix to form the irregular bulk Ni3Sn4 and NiSn4 With a higher current density of 5000 A/cm(2) large amounts of the Ni3Sn4 phase are distributed into the Sn matrix and even the Ni substrate is seriously consumed At lower temperatures below 150 degrees C and with 5000 A/cm(2) current, the plate-like metastable NiSn4 phase is found in the Sn matrix at the anode side In this electromigration study on the Sn/Ni interfacial reactions both the reaction temperatures and the applied current densities greatly affect the reaction phase species and their morphologies (C) 2010 Elsevier Ltd All rights reserved
引用
收藏
页码:75 / 80
页数:6
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