Enhanced thermoelectric performance of SnTe alloy with Ce and Li co-doping

被引：30

作者：

Guo, F. ^{[1
]}

Cui, B. ^{[1
]}

Guo, M. ^{[1
]}

Wang, J. ^{[1
]}

Cao, J. ^{[1
]}

Cai, W. ^{[1
]}

Sui, J. ^{[1
]}

机构：

[1] Harbin Inst Technol, Natl Key Lab Precis Hot Proc Met, Harbin 150001, Peoples R China

来源：

MATERIALS TODAY PHYSICS | 2019年 / 11卷

基金：

中国国家自然科学基金;

关键词：

Tin tellurideTin telluride; Carrier concentration; Nano-precipitate; Figure of merit; VALENCE-BAND; OPTIMIZATION;

D O I：

10.1016/j.mtphys.2019.100156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SnTe alloy is a kind of potential medium-temperature thermoelectric material to replace toxic PbTe. In this work, we demonstrate that both trivalent Ce doping and univalent Li doping can optimize the thermoelectric properties of SnTe by controlling carrier concentration in two directions, respectively. In addition, the dispersed high-density nano-precipitates caused by Li doping are helpful to enhance the phonon scattering and then reduce the lattice thermal conductivity. Moreover, co-doping of Ce and Li promotes the peak ZT and average ZT of SnTe simultaneously. The ZT value reaches approximatelyl at 873 K and the ZT(ave) reaches approximately 0.39 from 300 K to 873 K for Sn0.98Ce0.02Te-(Li2Te)(0.)(01). (C) 2019 Elsevier Ltd. All rights reserved.

引用

页数：6

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