Film characterization of Cu diffusion barrier dielectrics for 90nm and 65nm technology node Cu interconnects

被引：21

作者：

Goto, K ^{[1
]}

Yuasa, H ^{[1
]}

Andatsu, A ^{[1
]}

Matsuura, M ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, ULSI Dev Ctr, Itami, Hyogo 6648641, Japan

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219696

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes film characterization of Cu diffusion barrier SiC, SiCN and SiCO in detail. Although SiCN and SiCO achieve reduced leakage current and k-value, the biggest challenge is to achieve robust stability in film stress and k value because undesirable N and O doping cause increased film stress and k value after deposition. Fine-tuned SiC makes it possible to greatly reduce leakage current and k value to 3.9. From Bias Temperature Stress (BTS) measurement, our desired SiCN, SiCO and fine-tuned SiC are assured in 10-year durability to electrical Cu diffusion.

引用

页码：6 / 8

页数：3