Ultra-wideband dual-polarization silicon nitride power splitter based on modal engineered slot waveguides

被引:7
作者
Gonzalez-Andrade, David [1 ]
Guerber, Sylvain [2 ,3 ]
Duran-Valdeiglesias, Elena [2 ]
Perez-Galacho, Diego [2 ,4 ]
Le Roux, Xavier [2 ]
Vulliet, Nathalie [3 ]
Cremer, Sebastien [3 ]
Monfray, Stephane [3 ]
Cassan, Eric [2 ]
Marris-Morini, Delphine [2 ]
Boeuf, Frederic [3 ]
Cheben, Pavel [5 ]
Vivien, Laurent [2 ]
Velasco, Aitor V. [1 ]
Alonso-Ramos, Carlos [2 ]
机构
[1] CSIC, Inst Opt Daza de Valdes, E-28006 Madrid, Spain
[2] Univ Paris Sud, Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France
[3] STMicroelectronics SAS, 850 Rue Jean Monnet, F-38920 Crolles, France
[4] Univ Politecn Valencia, ITEAM Res Inst, Camino Vera S-N, E-46022 Valencia, Spain
[5] Natl Res Council Canada, 1200 Montreal Rd,Bldg M50, Ottawa, ON K1A 0R6, Canada
基金
欧盟地平线“2020”;
关键词
BROAD-BAND; PLATFORM;
D O I
10.1364/OL.383757
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Silicon nitride (SiN) waveguides provide a substantially lower index contrast, thermo-optic coefficient, and reduced. birefringence compared to silicon-on-insulator waveguides. These properties make SiN a prominent candidate for implementation of ultra-wideband dual-polarization photonics circuits with a great potential for datacom applications. State-of-the-art SiN power splitters are still hampered in terms of either bandwidth or single polarization operation. Here, we propose to overcome these limitations by exploiting modal and waveguide symmetry engineering in a single-mode slot waveguide. This topology prevents mode-beating, while granting symmetric power splitting for both polarizations. Experimental characterization of the fabricated device shows low loss ( <0.62 dB) and imbalance (<0.6 dB) within an unprecedented bandwidth of 420 nm (1.26-1.68 Am). (C) 2020 Optical Society of America
引用
收藏
页码:527 / 530
页数:4
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