0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices grown on InAsyP1-y step-graded buffers by molecular beam epitaxy

被引：29

作者：

Hudait, MK ^{[1
]}

Lin, Y

Palmisiano, MN

Ringel, SA

机构：

[1] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

[2] Bechtel Bettis Inc, W Mifflin, PA 15122 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 09期

关键词：

InAsP; InGaAs; lattice-mismatch; MBE; TPV;

D O I：

10.1109/LED.2003.816591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-junction, lattice-mismatched (LMM) In0.69Ga0.31As thermophotovoltaic (TPV) devices with bandgaps of 0.60 eV were grown on InP substrates by solid-source molecular beam epitaxy (MBE). Step-graded InAsy P1-y buffer layers with a total thickness of 1.6 mum were,used to mitigate the effects of 1.1% lattice mismatch between the device layer and the InP substrate. High-performance single-junction devices were achieved, With an open-circuit voltage of 0.357 V and a fill factor of 68.1% measured at a short-circuit current density of 1.18 A/cm(2) under high-intensity, low emissivity white light illumination. Device performance uniformity was outstanding, measuring to better than 1.0% across. a 2-in diameter InP wafer indicating the promise of MBE growth for large area TPV device arrays.

引用

页码：538 / 540

页数：3

共 13 条

[1] A review of progress in thermophotovoltaic generation of electricity [J].

Coutts, TJ .

RENEWABLE & SUSTAINABLE ENERGY REVIEWS, 1999, 3 (2-3) :77-184

[2]

COUTTS TJ, 1996, P 25 IEEE PHOT SPEC, P25

[3]

Fatemi NS, 1999, AIP CONF PROC, V460, P121

[4] InGaAs monolithic interconnected modules (MIMs) [J].

Fatemi, NS ;

Wilt, DM ;

Jenkins, PP ;

Weizer, VG ;

Hoffman, RW ;

Murray, CS ;

Scheiman, D ;

Brinker, D ;

Riley, D .

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, :799-804

[5] High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy [J].

Hudait, MK ;

Lin, Y ;

Wilt, DM ;

Speck, JS ;

Tivarus, CA ;

Heller, ER ;

Pelz, JP ;

Ringel, SA .

APPLIED PHYSICS LETTERS, 2003, 82 (19) :3212-3214

[6] High-performance In0.53Ga0.47 as thermophotovoltaic devices grown by solid source molecular beam epitaxy [J].

Hudait, MK ;

Andre, CL ;

Kwon, O ;

Palmisiano, MN ;

Ringel, SA .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) :697-699

[7]

HUDAIT MK, 2003, J APPL PHYS

[8] Multi-wafer growth and processing of 0.6-eV lnGaAs monolithic interconnected modules [J].

Murray, C ;

Newman, F ;

Murray, S ;

Hills, J ;

Aiken, D ;

Siergiej, R ;

Wernsman, B ;

Taylor, D .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :888-891

[9]

Nishikawa W, 1999, AIP CONF PROC, V460, P427, DOI 10.1063/1.57824

[10]

Siergiej RR, 2003, AIP CONF PROC, V653, P414, DOI 10.1063/1.1539396

← 1 2 →