CNTs Selectively Grown on Si Surface by Injection CVD method and their Field Emission Characteristics

被引：0
|
作者：
Prudnikava, Alena [1 ]
Labunov, Vladimir [1 ]
Shulitski, Boris [1 ]
Sakharuk, Vitaly [1 ]
Navitski, Aliaksandr
Mueller, Guenter
机构：
[1] Belarusian State Univ Informat & Radioelect, Lab Integrated Nanosyst, Minsk, BELARUS
来源：
EURODISPLAY 2009 | 2009年
关键词：
CARBON NANOTUBES;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Carbon nanotube (CNT) based cathodes of different configurations were obtained by growing CNTs on Si/SiO2 substrate by the atmospheric pressure CVD method using a volatile catalyst source (ferrocene/xylene mixture) in a unique regime when CNTs" grow only on Si surface, but do not on SiO2. Such selective growth was achieved by adjusting the macroparameters of the synthesis process. Field emission measurements performed using field emission scanning microscope showed uniform emission from nearly 100% of emitting sites.
引用
收藏
页码：319 / 321
页数：3
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